SK35GB12T4 Datasheet - Semikron International

SK35GB12T4, IGBT

SK 35 GB 12T4 SEMITOP® 2 IGBT module SK 35 GB 12T4

Features

* Compact design
* One screw mounting
* Heat transfer and isolation through direct copper bonded aluminium oxide ceramic (DCB)
* High short circuit capability
* Trench4 IGBT technology
* CAL4F diode technology
* VCE,sat with positive coefficien

Applications

* br>
* Inverter
* Motor drive Absolute Maximum Ratings Symbol Conditions Inverter - IGBT VCES IC Tj = 25 °C Tj = 175 °C Ts = 25 °C Ts = 70 °C ICnom ICRM ICRM = 3 x ICnom VGES tpsc Tj VCC = 800 V VGE ≤ 15 V VCES ≤ 1200 V Tj = 150 °C Inverse - Diode IF Tj = 175 °C Ts =

SK35GB12T4-SemikronInternational.pdf