SKM150GB12VG Datasheet - Semikron International

SKM150GB12VG IGBT

SKM150GB12VG Absolute Maximum Ratings Symbol IGBT VCES IC ICnom ICRM ICRM = 3xICnom VCC = 720 V VGE ≤ 20 V VCES ≤ 1200 V Tj = 25 °C Tj = 175 °C Tc = 25 °C Tc = 80 °C 1200 222 169 150 450 -20 20 Tj = 125 °C 10 -40 175 Tc = 25 °C Tc = 80 °C 187 140 150 IFRM = 3xIFnom tp = 10 ms, sin 180°, Tj = 25 °C 450 774 -40 175 Tterminal = 80 °C AC sinus 50Hz, t = 1 min 500 -40 125 4000 V A A A A V µs °C A A A A A °C A °C V Conditions Values Unit SEMITRANS® 3 VGES tpsc Tj IF IFnom Inverse diode SKM1.

SKM150GB12VG Features

* V-IGBT = 6. Generation Trench V-IGBT (Fuji)

* CAL4 = Soft switching 4. Generation CAL-diode

* Isolated copper baseplate using DBC technology (Direct Copper Bonding)

* UL recognized, file no. E63532

* Increased power cycling capability

* With integrat

SKM150GB12VG Datasheet (206.62 KB)

SKM150GB12VG Datasheet Preview — Preview of SKM150GB12VG PDF

Datasheet Details

Part number:

SKM150GB12VG

Manufacturer:

Semikron International

File Size:

206.62 KB

Description:

Igbt.

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