SKM195GAL123D Datasheet - Semikron International

SKM195GAL123D IGBT Modules

Absolute Maximum Ratings Symbol Conditions 1) VCES VCGR IC ICM VGES Ptot Tj, (Tstg) Visol humidity climate RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40 040 DIN IEC 68 T.1 Inverse Diode IF= IC Tcase = 25/80 °C IFM= ICM Tcase = 25/80 °C; tp = 1 ms IFSM tp = 10 ms; sin.; Tj = 150 °C I2t tp = 10 ms; Tj = 150 °C Values 123 D 1200 1200 200 / 150 400 / 300 ± 20 1250 40 . . .+150 (125) 2 500 Class F 55.

SKM195GAL123D Features

* MOS input (voltage controlled)

* N channel, Homogeneous Si

* Very low tail current with low temperature dependence

* High short circuit capability, self limiting to 6

* Icnom

* Latch-up free

* Fast & soft inverse CAL diodes8)

* Isolated c

SKM195GAL123D Datasheet (76.67 KB)

SKM195GAL123D Datasheet Preview — Preview of SKM195GAL123D PDF

Datasheet Details

Part number:

SKM195GAL123D

Manufacturer:

Semikron International

File Size:

76.67 KB

Description:

Igbt modules.

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