SKM300GA12V - IGBT
SKM300GA12V Absolute Maximum Ratings Symbol IGBT VCES IC ICnom ICRM ICRM = 3xICnom VCC = 720 V VGE ≤ 15 V VCES ≤ 1200 V Tj = 25 °C Tj = 175 °C Tc = 25 °C Tc = 80 °C 1200 420 319 300 900 -20 20 Tj = 125 °C 10 -40 175 Tc = 25 °C Tc = 80 °C 353 264 300 IFRM = 3xIFnom tp = 10 ms, sin 180°, Tj = 25 °C 900 1548 -40 175 Tterminal = 80 °C AC sinus 50 Hz, t = 1 min 500 -40 125 4000 V A A A A V µs °C A A A A A °C A °C V Conditions Values Unit SEMITRANS® 4 VGES tpsc Tj IF IFnom Inverse diode SKM
SKM300GA12V Features
* V-IGBT = 6. Generation Trench V-IGBT (Fuji)
* CAL4 = Soft switching 4. Generation CAL-diode
* Isolated copper baseplate using DBC technology (Direct Copper Bonding)
* UL recognized, file no. E63532
* Increased power cycling capability
* With integrat
