SKM300GBD12T4 Datasheet - Semikron International

SKM300GBD12T4, IGBT

SKM300GBD12T4 Absolute Maximum Ratings Symbol IGBT VCES IC ICnom ICRM ICRM = 3xICnom VCC = 800 V VGE ≤ 15 V VCES ≤ 1200 V Tj = 25 °C Tj = 175 °C Tc = .

Features

* IGBT4 = 4. generation fast trench IGBT (Infineon)
* CAL4 = Soft switching 4. generation CAL-diode
* Isolated copper baseplate using DBC technology (Direct Bonded Copper)
* Increased power cycling capability
* With integrated gate resistor
* For highe

Applications

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* Current source inverter Remarks
* The Fig.1 to Fig.9 are based on measurements of the SKM300GB12T4
* The series diodes (FWD) have the data of the inverse diodes of SKM400GB12T4
* Case temperature limited to Tc = 125°C max, recomm. Top = -40 +150°C, product re

SKM300GBD12T4-SemikronInternational.pdf