Datasheet4U Logo Datasheet4U.com

SKM75GB12V - V-IGBT

Datasheet Summary

Features

  • V-IGBT = 6. Generation Trench V-IGBT (Fuji).
  • CAL4 = Soft switching 4. Generation CAL-diode.
  • Isolated copper baseplate using DBC technology (Direct Copper Bonding).
  • UL recognized, file no. E63532.
  • Increased power cycling capability.
  • With integrated gate resistor.
  • Low switching losses at high di/dt Typical.

📥 Download Datasheet

Datasheet preview – SKM75GB12V

Datasheet Details

Part number SKM75GB12V
Manufacturer Semikron International
File Size 245.56 KB
Description V-IGBT
Datasheet download datasheet SKM75GB12V Datasheet
Additional preview pages of the SKM75GB12V datasheet.

📁 Similar Datasheet

Other Datasheets by Semikron International

Full PDF Text Transcription

Click to expand full text
SKM75GB12V SEMITRANS® 2 SKM75GB12V Features • V-IGBT = 6. Generation Trench V-IGBT (Fuji) • CAL4 = Soft switching 4. Generation CAL-diode • Isolated copper baseplate using DBC technology (Direct Copper Bonding) • UL recognized, file no. E63532 • Increased power cycling capability • With integrated gate resistor • Low switching losses at high di/dt Typical Applications* • AC inverter drives • UPS • Electronic welders Remarks • Case temperature limited to Tc = 125°C max, recomm. Top = -40 ... +150°C, product rel.
Published: |