* high current density due to mesa technology
* high surge current
* compatible to thick wire bonding
* compatible to all standard solder processes Thermal Characteristics Symbol Tj Tstg Tsolder Tsolder Rth(j-s) 10 min. 5 min. soldered on 0,38 mm DCB, reference point
SKR12
Semikron International
183.12 KB
Diode.
SKR 12,4 Qu bond Absolute Maximum Ratings Symbol VRRM IF(AV) i2t IFSM Tjmax Conditions Tj = 25 °C, R I = 0.2 mA Ts = 80 °C, T j = 150 °C Tj = 150 °C,.
📁 Related Datasheet
SKR100 Rectifier Diodes (Semikron)
SKR12-04 Silicon Rectifier Diodes (Semikron)
SKR12-08 Silicon Rectifier Diodes (Semikron)
SKR12-12 Silicon Rectifier Diodes (Semikron)
SKR12-14 Silicon Rectifier Diodes (Semikron)
SKR12-16 Silicon Rectifier Diodes (Semikron)
SKR130 Rectifier Diodes (Semikron)
SKR135F Fast Recovery Rectifier Diodes (Semikron)
SKR136F Fast Recovery Rectifier Diodes (Semikron)
SKR140F Fast Recovery Rectifier Diodes (Semikron)
