SKR12 Datasheet - Semikron International

SKR12 DIODE

SKR 12,4 Qu bond Absolute Maximum Ratings Symbol VRRM IF(AV) i2t IFSM Tjmax Conditions Tj = 25 °C, R I = 0.2 mA Ts = 80 °C, T j = 150 °C Tj = 150 °C, 10 ms, sin 180° 10 ms sin 180° Tj = 25 °C Tj = 150 °C Values 1600 190 26500 3200 2300 150 Unit V A A2s A A °C DIODE IF(DC) = 235 A VRRM = 1600 V Size: 12,4 mm x 12,4 mm SKR 12,4 Qu bond Electrical Characteristics Symbol IR VF V(TO) rT trr Conditions Tj = 25 °C, V RRM Tj = 120 °C, VRRM Tj = 25 °C, F I = 160 A Tj = 125 °C, IF = 160 A Tj = 125 °.

SKR12 Features

* high current density due to mesa technology

* high surge current

* compatible to thick wire bonding

* compatible to all standard solder processes Thermal Characteristics Symbol Tj Tstg Tsolder Tsolder Rth(j-s) 10 min. 5 min. soldered on 0,38 mm DCB, reference point

SKR12 Datasheet (183.12 KB)