SKiM909GD066HD Datasheet - Semikron International

SKiM909GD066HD, IGBT

SKiM909GD066HD Absolute Maximum Ratings Symbol IGBT VCES IC ICnom ICRM ICRM = 2xICnom VCC = 360 V VGE ≤ 15 V VCES ≤ 600 V VGES tpsc Tj Inverse diode I.

Features

* IGBT 3 Trench Gate Technology
* Solderless sinter technology
* VCE(sat) with positive temperature coefficient
* Low inductance case
* Isolated by Al2O3 DCB (Direct Copper Bonded) ceramic substrate
* Pressure contact technology for thermal contacts an

Applications

* Automotive inverter
* High reliability AC inverter wind
* High reliability AC inverter drives VGE=VCE, IC = 14.4 mA VGE = 0 V VCE = 600 V VCE = 25 V VGE = 0 V VGE = - 8 V+ 15 V Tj = 25 °C VCC = 300 V IC = 900 A RG on = 3 Ω RG off = 3 Ω di/dton = 5100 A/µs di/dtoff = 9000 A

SKiM909GD066HD-SemikronInternational.pdf