SKiiP25NABI066V3 Datasheet - Semikron International

SKiiP25NABI066V3 IGBT

© by SEMIKRON Rev. 0 * 06.07.2012 7 SKiiP 25NABI066V3 pinout, dimensions This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristi.

SKiiP 25NABI066V3 Absolute Maximum Ratings Symbol VCES IC IC Conditions Tj = 25 °C Tj = 150 °C Tj = 175 °C ICRM = 2 x ICnom VCC = 360 V VGE ≤ 15 V VCES ≤ 600 V Ts = 25 °C Ts = 70 °C Ts = 25 °C Ts = 70 °C Values 600 37 28 41 33 30 60 Tj = 150 °C 6 -40 175 600 Ts = 25 °C Ts = 70 °C Ts = 25 °C Ts = 70 °C 37 28 41 33 30 60 Tj = 150 °C 6 -40 175 600 Ts = 25 °C Ts = 70 °C Ts = 25 °C Ts = 70 °C 33 25 37 29 30 60 160 -40 175 Unit V A A A A A A µs °C V A A A A A A µs °C V A A A A A A A °C V A A A A.

SKiiP25NABI066V3 Features

* Contact springs for solder-free and quick assembly

* Trench-Field-Stop IGBT

* Freewheeling diodes in CAL technology

* HVIC gate driver in SOI technology with advanced level shifter

* Matched propagation delay

* Over-current and under-voltage detectio

SKiiP25NABI066V3-SemikronInternational.pdf