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SK100MLI07S5TD1E2 IGBT

SK100MLI07S5TD1E2 Description

SK100MLI07S5TD1E2 SEMITOP®E2 3-Level NPC SK100MLI07S5TD1E2 .

SK100MLI07S5TD1E2 Features

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* Optimized design for superior thermal performance
* Low inductive design
* Press-Fit contact technology
* Split IGBT gates for optimized driving
* 650V Trench5 IGBT (S5)
* Rapid switching diode technology
* Integrated NTC temperature sen

SK100MLI07S5TD1E2 Applications

* UPS
* Energy Storage Systems
* Solar Remarks
* Recommended Tj,op=-40 +150 °C
* IGBTs characteristics are valid for paralleled chips (split gates connected)
* IGBT1: outer IGBTs T1 & T4
* IGBT2: inner IGBTs T2 & T3
* Diode1: outer

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IGBT Semikron
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