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SK10DGDL07E3ETE1 IGBT

SK10DGDL07E3ETE1 Description

SK10DGDL07E3ETE1 SEMITOP®E1 3-phase Converter-Inverter-Brake (CIB) Engineering Sample SK10DGDL07E3ETE1 Target Data .

SK10DGDL07E3ETE1 Features

* br>
* Optimized design for superior thermal performance
* Low inductive design
* Press-Fit contact technology
* 650V Trench IGBT3 (E3)
* Robust and soft switching CAL4F diode technology
* PEP rectifier diode technology for enhanced power and environme

SK10DGDL07E3ETE1 Applications

* Motor drives
* Air conditioning
* Auxiliary Inverters Remarks
* Recommended Tj,op=-40 +150 °C Absolute Maximum Ratings Symbol Conditions Inverter - IGBT VCES IC Tj = 25 °C λpaste=0.8 W/(mK) Tj = 175 °C Ts = 25 °C Ts = 70 °C IC λpaste=2.5 W/(mK) Ts = 25 °C T

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