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SK25TMLID12F4TE2 IGBT

SK25TMLID12F4TE2 Description

SK25TMLID12F4TE2 SEMITOP®E2 3-phase 3-Level TNPC Engineering Sample SK25TMLID12F4TE2 Target Data .

SK25TMLID12F4TE2 Features

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* Optimized design for superior thermal performance
* Low inductive design
* Press-Fit contact technology
* 1200V Trench IGBT4 Fast (F4)
* 650V Trench IGBT3 (E3)
* Robust and soft switching CAL4F diode technology
* Integrated NTC temperatu

SK25TMLID12F4TE2 Applications

* UPS
* Solar Remarks
* Recommended Tjop= -40 +150°C
* IGBT1: outer IGBTs T1 & T4
* IGBT2: inner IGBTs T2 & T3
* Diode1: outer Diodes D1 & D4
* Diode2: inner Diodes D2 & D3 Absolute Maximum Ratings Symbol Conditions IGBT1 VCES IC IC IC

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Semikron SK25TMLID12F4TE2-like datasheet