SKIIP81AC12
SKii P 81 AC 12
- SKii P 81 AC 12 I Absolute Maximum Ratings
Symbol VCES VGES IC ICM Tj Tstg Visol Conditions 1) Values 1200 ± 20 65 / 45 130 / 90
- 40 . . . + 150
- 40 . . . + 125 2500 60 / 40 120 / 80 550 1500 Units V V A A °C °C V A A A A2 s
Theatsink = 25 / 80 °C tp < 1 ms; Theatsink = 25 / 80 °C AC, 1 min.
Mini SKii P 8 SEMIKRON integrated intelligent Power SKii P 81 AC 12 SKii P 81 AC 12 I 3) IGBT 3-phase bridge inverter
Inverse Diode IF =
- IC Theatsink = 25 / 80 °C IFM =
- ICM tp < 1 ms; Theatsink = 25 / 80 °C tp = 10 ms; sin., Tj = 25 °C IFSM tp = 10 ms; sin., Tj = 25 °C I2t
Case M8
Characteristics
Symbol Conditions 1) IGBT
- Inverter IC = 50 A Tj = 25 (125) °C VCEsat VCC = 600 V; VGE = ± 15 V td(on) IC = 50 A; Tj = 125 °C tr Rgon = Rgoff = 22 Ω td(off) inductive load tf Eon + Eoff Cies VCE = 25 V; VGE = 0 V, 1 MHz per IGBT Rthjh Diode 2)
- Inverter VF = VEC IF = 50 A Tj = 25 (125) °C Tj = 125 °C VTO Tj = 125 °C r T IF = 50 A, VR =
- 600 V IRRM di F/dt =
- 800 A/µs Qrr VGE = 0 V,...
