SKM450GB33F - IGBT

Semikron

Datasheet Details

3.3 kV F-IGBT.
450A half bridge.
Low Vce, Eoff and Rth.
High power density.
Low inductance module design.
T-sensor.
Easy paralleling and easy power scaling.
For flexible and compact medium voltage inverters Absolute Maximum Ratings Symbol Conditions IGBT VCES IC Tj = 25 °C Tj = 150 °C Tc = 25 °C Tc = 80 °C ICnom ICRM VGES tpsc Tj ICRM = 2xICnom VCC = 2200 V, Ls = 40 nH, RGon = 6.8 Ω, RGoff = 68 Ω, VGE ± 15, Tj = 150.

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Published: Mar 29, 2021 |