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SKM600GM12E4 IGBT

SKM600GM12E4 Description

SKM600GM12E4 SEMITRANS® 3 IGBT4 Modules SKM600GM12E4 .

SKM600GM12E4 Features

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* IGBT4 = 4th generation medium fast trench IGBT (Infineon)
* CAL4 = Soft switching 4th generation CAL-diode
* Insulated copper baseplate using DBC technology (Direct Bonded Copper)
* Increased power cycling capability
* With integrated gate resistor

SKM600GM12E4 Applications

* Matrix Inverter
* Bidirectional switch Remarks
* Case temperature limited to Tc = 125°C max, recomm. Top = -40 +150°C, product rel. results valid for Tj = 150°C GM © by SEMIKRON Absolute Maximum Ratings Symbol Conditions IGBT VCES IC Tj = 25 °C Tj = 175 °C Tc = 25 °C

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Datasheet Details

Part number
SKM600GM12E4
Manufacturer
Semikron
File Size
646.92 KB
Datasheet
SKM600GM12E4-Semikron.pdf
Description
IGBT

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