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PES060N04GT - N-Channel Enhancement Mode Power MOSFET

Semione

PES060N04GT Description

N-Channel Enhancement Mode Power MOSFET .
The PES060N04GT uses deep trench technology to provide excellent RDS(ON) and low gate charge.

PES060N04GT Features

* VDS = 40V, ID = 54A RDS(ON) < 4.6mΩ @ VGS=10V RDS(ON) < 8mΩ @ VGS=4.5V
* High Power and current handing capability
* Lead free product is acquired

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Datasheet Details

Part number: PES060N04GT
Manufacturer: Semione
File Size: 342.26 KB
Datasheet: PES060N04GT-Semione.pdf
Description: N-Channel Enhancement Mode Power MOSFET

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N-Channel Enhancement Mode Power MOSFET Semione

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