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SMC8810W Datasheet - Semtron

SMC8810W Common-Drain Dual N-Channel MOSFET

SMC8810 is the Dual N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced trench technology to provide excellent RDS(ON). These devices are well suited for high efficiency fast switching applications, low in-line power loss are needed in small outl.

SMC8810W Features

* VDS = 20V, ID = 7.6A RDS(ON)=14.0mΩ(Typ.)@VGS=4.5V RDS(ON)=14.5mΩ(Typ.)@VGS=4.0V RDS(ON)=15.5mΩ(Typ.)@VGS=3.2V RDS(ON)=17.8mΩ(Typ.)@VGS=2.5V RDS(ON)=24.5mΩ(Typ.)@VGS=1.8V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and Maximum DC current capability

SMC8810W-Semtron.pdf