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SMC8810W Datasheet - Semtron

SMC8810W Common-Drain Dual N-Channel MOSFET

SMC8810 is the Dual N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced trench technology to provide excellent RDS(ON). These devices are well suited for high efficiency fast switching applications, low in-line power loss are needed in small outl.

SMC8810W Features

* VDS = 20V, ID = 7.6A RDS(ON)=14.0mΩ(Typ.)@VGS=4.5V RDS(ON)=14.5mΩ(Typ.)@VGS=4.0V RDS(ON)=15.5mΩ(Typ.)@VGS=3.2V RDS(ON)=17.8mΩ(Typ.)@VGS=2.5V RDS(ON)=24.5mΩ(Typ.)@VGS=1.8V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and Maximum DC current capability

SMC8810W Datasheet (329.17 KB)

Preview of SMC8810W PDF

Datasheet Details

Part number:

SMC8810W

Manufacturer:

Semtron

File Size:

329.17 KB

Description:

Common-drain dual n-channel mosfet.

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SMC8810W Common-Drain Dual N-Channel MOSFET Semtron

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