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SPM6G080-120D Three-Phase IGBT BRIDGE

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Description

SENSITRON SEMICONDUCTOR TECHNICAL DATA DATASHEET 4099, REV D SPM6G080-120D Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTI.
A 1200 VOLT, 80 AMP, THREE PHASE IGBT BRIDGE (Tj=250C UNLESS OTHERWISE SPECIFIED) SYMBOL MI N TYP MAX UNIT ELECTRICAL CHARACTERISTICS PER IGBT DEVIC.

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Datasheet Specifications

Part number
SPM6G080-120D
Manufacturer
Sensitron
File Size
108.01 KB
Datasheet
SPM6G080-120D_Sensitron.pdf
Description
Three-Phase IGBT BRIDGE

Features

* 4- Under-voltage shutdown is automatically reset after 300 msec once the VCC rises above the threshold limit. 5- Desaturation shutdown is a latching feature and internally reset after 300 msec. 6- When any of the internal protection features is activated, SD is pulled down. 7- SD can be used to shu

Applications

* of information, products or circuits described in the datasheets. 4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s)

SPM6G080-120D Distributors

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