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GL4800 Thin Type Infrared Emitting Diode

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Description

GL4800 GL4800 s .

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Datasheet Specifications

Part number
GL4800
Manufacturer
Sharp Electrionic Components
File Size
33.64 KB
Datasheet
GL4800_SharpElectrionicComponents.pdf
Description
Thin Type Infrared Emitting Diode

Features

* 1. Thin type ( Thickness : 1.5mm ) 2. Beam angle ( ∆θ : TYP. ± 30˚ ) 3. Radiant flux ( Φ e : MIN. 0.7mW at I F = 20mA ) 4. Epoxy resin package Thin Type Infrared Emitting Diode s Outline Dimensions Rest of gate 0.3 MAX. 3.0 ± 0.2 1.6 1.0 2 - C0.5 0.8 ( Unit : mm ) 1.5 ± 0.2 0.8 Pink transparent ep

Applications

* 1. Floppy disk drives 2. Optoelectronic switches MIN.0.5 17.5 ± 0.5 2 - 0.9 1.8 2 - 0.45 0.8 1 2 1 Anode 2 Cathode 2.54 0.25 1 2 s Absolute Maximum Ratings Parameter Power dissipation Forward current
* 1 Peak forward current Reverse voltage Operating temperature Storage temperature

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