Datasheet Details
- Part number
- LH28F320S3TD-L10
- Manufacturer
- Sharp Electrionic Components
- File Size
- 291.40 KB
- Datasheet
- LH28F320S3TD-L10_SharpElectrionicComponents.pdf
- Description
- 32 M-bit (2 MB x 8/1 MB x 16 x 2-Bank) Smart 3 Dual Work Flash Memory
LH28F320S3TD-L10 Description
LH28F320S3TD-L10 LH28F320S3TD-L10 .
The LH28F320S3TD-L10 Dual Work flash memory with Smart 3 technology is a high-density, low-cost, nonvolatile, read/write storage solution for a wide r.
LH28F320S3TD-L10 Features
* Absolute protection with VPP = GND
* Flexible block locking
* Erase/write lockout during power transitions
* SRAM-compatible write interface
* User-configurable x8 or x16 operation
* High-density symmetrically-blocked architecture
* Sixty-fou
LH28F320S3TD-L10 Applications
* having high programming performance is achieved through highly-optimized page buffer operations. Its symmetrically-blocked architecture, flexible voltage and enhanced cycling capability provide for highly flexible component suitable for resident flash arrays, SIMMs and memory cards. Its enhanced su
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