LH28F320S3TD-L10 Datasheet - Sharp Electrionic Components

LH28F320S3TD-L10, 32 M-bit (2 MB x 8/1 MB x 16 x 2-Bank) Smart 3 Dual Work Flash Memory

LH28F320S3TD-L10 LH28F320S3TD-L10 .
The LH28F320S3TD-L10 Dual Work flash memory with Smart 3 technology is a high-density, low-cost, nonvolatile, read/write storage solution for a wide r.

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Datasheet Details

Part number:

LH28F320S3TD-L10

Manufacturer:

Sharp Electrionic Components

File Size:

291.40 KB

Description:

32 M-bit (2 MB x 8/1 MB x 16 x 2-Bank) Smart 3 Dual Work Flash Memory

Features

* Absolute protection with VPP = GND
* Flexible block locking
* Erase/write lockout during power transitions
* SRAM-compatible write interface
* User-configurable x8 or x16 operation
* High-density symmetrically-blocked architecture
* Sixty-fou

Applications

* having high programming performance is achieved through highly-optimized page buffer operations. Its symmetrically-blocked architecture, flexible voltage and enhanced cycling capability provide for highly flexible component suitable for resident flash arrays, SIMMs and memory cards. Its enhanced su

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LH28F320S3TD-L10 M-bit 2-Bank Smart Dual Work Flash Memory Sharp Electrionic Components

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