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LH28F320S3TD-L10

32 M-bit (2 MB x 8/1 MB x 16 x 2-Bank) Smart 3 Dual Work Flash Memory

LH28F320S3TD-L10 Features

* Absolute protection with VPP = GND

* Flexible block locking

* Erase/write lockout during power transitions

* SRAM-compatible write interface

* User-configurable x8 or x16 operation

* High-density symmetrically-blocked architecture

* Sixty-fou

LH28F320S3TD-L10 General Description

The LH28F320S3TD-L10 Dual Work flash memory with Smart 3 technology is a high-density, low-cost, nonvolatile, read/write storage solution for a wide range of applications, having high programming performance is achieved through highly-optimized page buffer operations. Its symmetrically-blocked archi.

LH28F320S3TD-L10 Datasheet (291.40 KB)

Preview of LH28F320S3TD-L10 PDF

Datasheet Details

Part number:

LH28F320S3TD-L10

Manufacturer:

Sharp Electrionic Components

File Size:

291.40 KB

Description:

32 m-bit (2 mb x 8/1 mb x 16 x 2-bank) smart 3 dual work flash memory.

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TAGS

LH28F320S3TD-L10 M-bit 2-Bank Smart Dual Work Flash Memory Sharp Electrionic Components

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LH28F320S3TD-L10 Distributor