LH5496 Datasheet, Fifo, Sharp Electrionic Components

LH5496 Features

• Fifo
• Fast Access Times: 15
• /20/25/35/50/65/80 ns
• Full CMOS Dual Port Memory Array
• Fully Asynchronous Read and Write
• Expandable-in Width and D

PDF File Details

Part number:

LH5496

Manufacturer:

Sharp Electrionic Components

File Size:

141.77kb

Download:

📄 Datasheet

Description:

Cmos 512 x 9 fifo. The LH5496/96H are dual port memories with internal addressing to implement a First-In, First-Out algorithm. Through an advanced dual

LH5496 Application

• Applications Empty, Full, and Half-Full status flags monitor the extent to which data has been written into the FIFO, and prevent improper operatio

TAGS

LH5496

Sharp Electrionic Components

📁 Related Datasheet

LH5491 - Cascadable 64 x 8 FIFO Cascadable 64 x 9 FIFO (Sharp Electrionic Components)
LH5481 LH5491 FEATURES • Fastest 64 × 8/9 Cascadable FIFO 35/25/15 MHz • Expandable in Word Width and FIFO Depth • Almost-Full/Almost-Empty and Half-F.

LH5493 - 4K x 9 Parallel to Serial FIFO (Sharp)
.. .. .. .. .. .. .. .

LH5496H - CMOS 512 x 9 FIFO (Sharp Electrionic Components)
LH5496/96H FEATURES • Fast Access Times: 15 */20/25/35/50/65/80 ns • Full CMOS Dual Port Memory Array • Fully Asynchronous Read and Write • Expandable.

LH5497 - CMOS 1K x 9 FIFO (Sharp)
.. ww.. .. . .. 4U. DataSheet 4 U . .DataSHeet4U. ..

LH5498 - CMOS 2K x 9 FIFO (Sharp)
.

LH5498U - CMOS 2K x 9 FIFO (Sharp)
.

LH5499 - CMOS 4K x 9 FIFO (Sharp)
.. .. .. .. .. .. .. .

LH540202 - CMOS 1024 x 9 Asynchronous FIFO (Sharp Electrionic Components)
LH540202 FEATURES • Fast Access Times: 15/20/25/35/50 ns • Fast-Fall-Through Time Architecture Based on CMOS Dual-Port SRAM Technology • Input Port an.

LH540203 - CMOS 2048 x 9 Asynchronous FIFO (Sharp Electrionic Components)
LH540203 FEATURES • Fast Access Times: 15/20/25/35/50 ns • Fast-Fall-Through Time Architecture Based on CMOS Dual-Port SRAM Technology • Input Port an.

LH540204 - CMOS 4096 x 9 Asynchronous FIFO (Sharp Electrionic Components)
LH540204 FEATURES • Fast Access Times: 20/25/35/50 ns • Fast-Fall-Through Time Architecture Based on CMOS Dual-Port SRAM Technology • Input Port and O.