MSF10065V1 - Silicon Carbide Diode
(Maple Semiconductor)
MSF10065V1
MSF10065V1 650V Silicon Carbide Diode
Features
-650-Volt Schottky Rectifier -Shorter recovery time -High-speed switching possible -High-Fr.
MSF10120V1 - Silicon Carbide Diode
(Maple Semiconductor)
MSF10120V1
MSF10120V1 1200V Silicon Carbide Diode
Features
-1200-Volt Schottky Rectifier -Shorter recovery time -High-speed switching possible -High.
MSF10N40 - 400V N-Channel MOSFET
(Bruckewell)
MSF10N40
400V N-Channel MOSFET
Description The MSF10N40 is a N-channel enhancement-mode MOSFET , providing the designer with the best bination of f.
MSF10N60 - 600V N-Channel MOSFET
(Bruckewell)
MSF10N60
600V N-Channel MOSFET
Description The MSF10N60 is a N-channel enhancement-mode MOSFET , providing the designer with the best bination of f.
MSF10N65 - 650V N-Channel MOSFET
(Bruckewell)
MSF10N65
650V N-Channel MOSFET
Description The MSF10N65 is a N-channel enhancement-mode MOSFET , providing the designer with the best bination of f.
MSF10N80 - 800V N-Channel MOSFET
(Bruckewell)
MSF10N80
800V N-Channel MOSFET
Description The MSF10N80 is a N-channel enhancement-mode MOSFET , providing the designer with the best bination of f.
MSF10N80A - 800V N-Channel MOSFET
(Bruckewell)
MSF10N80A 800V N-Channel MOSFET
FEATURES Originative New Design Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Ch.
MSF11N70 - N-Channel 700V MOSFET
(Bruckewell)
MSF11N70
N-Channel 700V MOSFET
Description The MSF11N70 is a N-channel enhancement-mode MOSFET , providing the designer with the best bination of f.