D100JHT120V Datasheet, Diodes, Shindengen

PDF File Details

Part number:

D100JHT120V

Manufacturer:

Shindengen

File Size:

1.50MB

Download:

📄 Datasheet

Description:

Bridge diodes.

D100JHT120V Application

• Applications requiring an ordinary level of reliability. If these products are to be used in equipment or devices for special or specific applicatio

TAGS

D100JHT120V

Shindengen

📁 Related Datasheet

D100JHT160V - Bridge Diodes (Shindengen)
D100JHT160V Bridge Diodes 1600V, 100A Feature ・DIP ・High Current ・UL E142422 ・Pb free terminal ・RoHS:Yes OUTLINE Package (House Name): JH Equivalent.

D100JHT80V - Bridge Diodes (Shindengen)
D100JHT80V Bridge Diodes 800V, 100A Feature ・DIP ・High Current ・UL E142422 ・Pb free terminal ・RoHS:Yes OUTLINE Package (House Name): JH Equivalent c.

D1000 - 2SD1000 (Renesas)
.

D1001 - 2SD1001 (Renesas)
.

D1001UK - METAL GATE RF SILICON FET (Seme LAB)
TetraFET D1001UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA A B C 1 4 M 2 D 3 E F GOLD METALLISED MULTI-PURPOSE SILICON DMOS R.

D1002UK - METAL GATE RF SILICON FET (Seme LAB)
TetraFET D1002UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA A B C 1 4 M 2 D 3 E F GOLD METALLISED MULTI-PURPOSE SILICON DMOS R.

D1003UK - METAL GATE RF SILICON FET (Seme LAB)
TetraFET D1003UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA A B 1 2 4 3 M G C D E F HK PIN 1 PIN 3 SOURCE SOURCE DM PIN 2 .

D1004 - METAL GATE RF SILICON FET (Seme LAB)
TetraFET D1004UK METAL GATE RF SILICON FET MECHANICAL DATA C D (2 pls) E B 1 2 3 A G 5 4 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 8.

D10040180GT - GaAs Power Doubler (PDI)
.. Product Specification D10040180GT GaAs Power Doubler, 40 – 1000MHz, 19.0dB min. Gain @ 1GHz, 375mA max. @ 24VDC FEATURES • • • .

D10040180GTH - GaAs Power Doubler (PDI)
.. Product Specification D10040180GTH GaAs Power Doubler, 40 – 1000MHz, 19.0dB min. Gain @ 1GHz, 440mA max. @ 24VDC FEATURES • • •.