Datasheet4U.com - K2196

K2196 Datasheet, 2sk2196 equivalent, Shindengen

Page 1 of K2196 Page 2 of K2196 Page 3 of K2196
  • Preview is limited to a maximum of three pages.

PDF File Details

Part number: K2196

Manufacturer: Shindengen

File Size: 382.81KB

Download: 📄 Datasheet

Description: 2SK2196

📥 Download PDF (382.81KB) Datasheet Preview: K2196

PDF File Details

Part number: K2196

Manufacturer: Shindengen

File Size: 382.81KB

Download: 📄 Datasheet

Description: 2SK2196

K2196 Features and benefits


*Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small.
*The static Rds(on) is small.
*The switching time is fast. APPLICATION.

Image gallery

Page 1 of K2196 Page 2 of K2196 Page 3 of K2196

TAGS

K2196
2SK2196
Shindengen

📁 Related Datasheet

K2194 - 2SK2194 (Shindengen Electric)
SHINDENGEN VX-2 Series Power MOSFET N-Channel Enhancement type 2SK2194 (F15W50VX2) 500V 15A www..com OUTLINE DIMENSIONS Case :: MTO-3P E-.

K2195 - 2SK2195 (Shindengen Electric)
SHINDENGEN VX-2 Series Power MOSFET N-Channel Enhancement type 2SK2195 (FP15W50VX2) 500V 15A FEATURES ●Input capacitance (Ciss) is small. OUTLINE DI.

K2197 - 2SK2197 (Shindengen)
SHINDENGEN VX-2 Series Power MOSFET N-Channel Enhancement type 2SK2197 (FP20W50VX2) 500V 20A FEATURES ●Input capacitance (Ciss) is small. OUTLINE DI.

K210 - Silicon Zener Diodes (Aeroflex)
Silicon Zener Diodes Glass Axial Leaded Low Level, Very Low Voltage, Low Leakage Model K120 K150 K180 K210 K240 K270 K300 K330 K360 K390 K430 K470 .

K2101 - 2SK2101 (Fuji Electric)
www..com 2SK2101-01MR FAP-IIA Series N-channel MOS-FET 800V 2,1Ω 6A 50W > Features High Speed Switching Low On-Resistance No Secondar.

K2111 - MOS Field Effect Transistor (Kexin)
SMD Type MOS Field Effect Transistor 2SK2111 MOSFICET Features Low on-resistance RDS(on)=0.6 MAX.@VGS=4.0V,ID=0.5A High switching speed SOT-89 4.5.

K2114 - 2SK2114 (Hitachi Semiconductor)
2SK2114, 2SK2115 Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive curr.

K2115 - 2SK2115 (Hitachi Semiconductor)
2SK2114, 2SK2115 Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive curr.

K2128 - 2SK2128 (ETC)
www..com Power F-MOS FETs 2SK2128 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed: EAS > 15mJ q VGSS =.

K2129 - 2SK2129 (ETC)
Power F-MOS FETs 2SK2129 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed: EAS > 20mJ q VGSS = ±30V guaranteed q H.

Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts