BAS16-03W
BAS 16-03W
Silicon Switching Diode Preliminary data
- For high-speed switching applications
VPS05176
Type BAS 16-03W
Marking B
Ordering Code Q62702-A1231
Pin Configuration 1=A 2=C
Package SOD-323
Maximum Ratings Parameter Diode reverse voltage Peak reverse voltage Forward current Surge forward current, t = 1 µs Total power dissipation, T S = 111 °C Junction temperature Storage temperature Symbol Value 75 85 250 4.5 250 150
- 65 ...+150 m A A m W °C Unit V
VR VRM IF I FS Ptot Tj T stg
Thermal Resistance Junction
- ambient
1)
Rth JA Rth JS
≤ 235 ≤ 155
K/W
Junction
- soldering point
1) Package mounted on alumina 15mm x 16.7mm x 0.7mm Semiconductor Group Semiconductor Group 11
Mar-13-1998 1998-11-01
BAS 16-03W
Electrical Characteristics at TA = 25°C, unless otherwise specified. Symbol Values Parameter min. DC characteristics Breakdown voltage typ. max.
- Unit
V(BR) VF
V m V
I (BR) = 100 µA
Forward voltage
I F = 1 m A I F = 10 m A I F = 50 m A I F = 150 m A
Reverse...
