BC857CW Datasheet - Siemens Semiconductor Group

BC857CW PNP Silicon AF Transistors

Collector-emitter voltage Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector peak current Total power dissipation, TS = 115 ˚C Junction temperature Storage temperature range Thermal Resistance Junction - ambient1) Junction - soldering point Rth JA Rth J.

BC857CW Features

* q q q q q For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 847W, BC 848W, BC 849W, BC 850W (NPN) Type BC 856 AW BC 856 BW BC 857 AW BC 857 BW BC 857 CW BC 858 AW BC 858 BW BC 858 CW BC

BC857CW_SiemensSemiconductorGroup.pdf