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BPY11P Datasheet - Siemens Semiconductor Group

BPY11P Silizium-Fotoelement Silicon Photovoltaic Cell

Betriebs- und Lagertemperatur Operating and storage temperature range Sperrspannung Reverse voltage Symbol Symbol Wert Value * 55 + 100 1 Einheit Unit °C V Top; Tstg VR Kennwerte (TA = 25 °C, Normlicht A, T = 2856 K) Characteristics (TA = 25 °C, standard light A, T = 2856 K) Bezeichnung D.
BPY 11 P Silizium-Fotoelement Silicon Photovoltaic Cell BPY 11 P Maβe in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale q Speziell geeignet für Anwendungen im Bereich von 420 nm bis 1060 nm q Kathode = Chipunterseite q Mit feuchtigkeitsabweisender Schutzschicht überzogen q Gruppiert lieferbar Anwendungen q für Meβ-, Steuer- und Regelzwecke q zur Abtastung von Lichtimpulsen q quantitative Lichtmessung im sichtbaren Licht- und nahen Infrarotb.

BPY11P Features

* q Especially suitable for applications from 420 nm to 1060 nm q Cathode = back contact q Coated with a humidity-proof protective layer q Binned by spectral sensitivity Applications q For control and drive circuits q Light pulse scanning q Quantitative light measurements in the visible light and near

BPY11P Datasheet (185.02 KB)

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Datasheet Details

Part number:

BPY11P

Manufacturer:

Siemens Semiconductor Group

File Size:

185.02 KB

Description:

Silizium-fotoelement silicon photovoltaic cell.

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BPY11P Silizium-Fotoelement Silicon Photovoltaic Cell Siemens Semiconductor Group

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