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BSM35GB120DN2 Datasheet - Siemens Semiconductor Group

BSM35GB120DN2 IGBT

BSM 35 GB 120 DN2 IGBT Power Module Preliminary data Half-bridge Including fast free-wheeling diodes Doubled diode area Package with insulated metal base plate Type BSM 35 GB 120 DN2 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Symbol Values 1200 1200 Unit V VCE IC Package HALF-BRIDGE 1 Ordering Code C67070-A2111-A70 1200V 50A VCE VCGR VGE IC RGE = 20 kΩ Gate-emitter voltage DC collector current ± 20 A 50 35 TC = 25 .

BSM35GB120DN2_SiemensSemiconductorGroup.pdf

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Datasheet Details

Part number:

BSM35GB120DN2

Manufacturer:

Siemens Semiconductor Group

File Size:

110.28 KB

Description:

Igbt.

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BSM35GB120DN2 BSM35GB120DN2 IGBT Siemens Semiconductor Group