BSM35GB120DN2 Overview
Static Characteristics Gate threshold voltage Values typ. Switching Characteristics, Inductive Load at Tj = 125 °C Turn-on delay time Values typ. Tj ≤ 150 °C 300 W Safe operating area IC = ƒ(VCE) parameter:.
BSM35GB120DN2 datasheet by Siemens Semiconductor Group (now Infineon).
| Part number | BSM35GB120DN2 |
|---|---|
| Datasheet | BSM35GB120DN2_SiemensSemiconductorGroup.pdf |
| File Size | 110.28 KB |
| Manufacturer | Siemens Semiconductor Group (now Infineon) |
| Description | IGBT |
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Static Characteristics Gate threshold voltage Values typ. Switching Characteristics, Inductive Load at Tj = 125 °C Turn-on delay time Values typ. Tj ≤ 150 °C 300 W Safe operating area IC = ƒ(VCE) parameter:.
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