Datasheet4U Logo Datasheet4U.com

BSP300 - N-Channel Transistor

📥 Download Datasheet

Datasheet preview – BSP300

Datasheet Details

Part number BSP300
Manufacturer Siemens Semiconductor Group
File Size 98.09 KB
Description N-Channel Transistor
Datasheet download datasheet BSP300 Datasheet
Additional preview pages of the BSP300 datasheet.

📁 Similar Datasheet

  • BSP300 - SIPMOS Small-Signal Transistor (Infineon Technologies AG)
  • BSP30 - MEDIUM POWER AMPLIFIER (STMicroelectronics)
  • BSP30 - Surface mount Si-Epitaxial PlanarTransistors (Diotec Semiconductor)
  • BSP304 - P-channel enhancement mode vertical D-MOS transistors (NXP)
  • BSP304A - P-channel enhancement mode vertical D-MOS transistors (NXP)
  • BSP308 - Sipmos(r) Small-signal-transistor (Infineon Technologies)
  • BSP31 - PNP medium power transistors (NXP)
  • BSP31 - MEDIUM POWER AMPLIFIER (STMicroelectronics)
  • BSP315P - SIPMOS Small-Signal-Transistor (Infineon Technologies AG)
  • BSP316P - SIPMOS Small-Signal-Transistor (Infineon Technologies AG)
Other Datasheets by Siemens Semiconductor Group

Full PDF Text Transcription

Click to expand full text
BSP 300 SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • Avalanche rated • VGS(th)= 2.0... 4.0 V Pin 1 G Pin 2 D Pin 3 S Pin 4 D Type BSP 300 Type BSP 300 BSP 300 VDS 800 V ID 0.19 A RDS(on) 20 Ω Package SOT-223 Marking BSP 300 Ordering Code Q67050 -T0009 Q67050-T0017 Tape and Reel Information E6433 E6327 Maximum Ratings Parameter Continuous drain current Symbol Values 0.19 Unit A ID IDpuls 0.76 TA = 25 °C DC drain current, pulsed TA = 25 °C Avalanche energy, single pulse EAS 36 mJ ID = 0.8 A, VDD = 50 V, RGS = 25 Ω L = 105 mH, Tj = 25 °C Gate source voltage Power dissipation VGS Ptot ± 20 1.
Published: |