BUP410D
Siemens Semiconductor Group
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Igbt.
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BUP410 - IGBT
(Siemens Semiconductor Group)
BUP 410
IGBT Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated Pin 1 G Type BUP.
BUP41 - Silicon Epitaxial Planar NPN Transistor
(TT electronics)
≤ δ≤
μ μ
.
BUP41 - Silicon NPN Power Transistor
(INCHANGE)
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUP41
DESCRIPTION ·High Collector Current-IC= 6A ·Low Collector Sa.
BUP400 - IGBT
(Siemens Semiconductor Group)
BUP 400
IGBT Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated Pin 1 G Type BUP.
BUP400D - IGBT
(Siemens Semiconductor Group)
BUP 400D
IGBT With Antiparallel Diode Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Includi.
BUP401 - IGBT
(Siemens Semiconductor Group)
BUP 401
IGBT Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated Pin 1 G Type BUP.
BUP402 - IGBT
(Siemens Semiconductor Group)
BUP 402
IGBT
Preliminary data
• Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated Pin 1 G Type BU.
BUP403 - IGBT
(Siemens Semiconductor Group)
BUP 403
IGBT Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated Pin 1 G Type BUP.
BUP49 - NPN Power Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
DESCRIPTION ·Large collector current ·Low collector saturation voltage ·High power dissipation ·Minimum Lot-to-Lot v.
BUP49 - Bipolar NPN Device
(Seme LAB)
BUP49
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44)
6.35 (0.25) 9.15 (0.36)
1.52 (0.06) 3.43 (0.135)
Bipolar NPN D.
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