PZT3906
PNP Silicon Switching Transistor
High DC current gain 0.1 m A to 100 m A q Low collector-emitter saturation voltage q plementary type: PZT 3904 (NPN) q
PZT 3906
Type PZT 3906
Marking ZT 3906
Ordering Code (tape and reel) Q62702-Z2030
Pin Configuration 1 2 3 4 B C E C
Package1) SOT-223
Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Total power dissipation, TS = 80 ˚C Junction temperature Storage temperature range Thermal Resistance Junction
- ambient2) Junction
- soldering point Rth JA Rth JS
≤ ≤
Symbol VCE0 VCB0 VEB0 IC Ptot Tj Tstg
Values 40 40 5 200 1.5 150
- 65 … + 150
Unit V m A W ˚C
117 47
K/W
1) 2)
For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Semiconductor Group
PZT 3906
Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC...
