SFH4552 Datasheet - Siemens Semiconductor Group

SFH4552 - GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter

Betriebs- und Lagertemperatur Operating and storage temperature range Sperrspannung Reverse voltage Stoßstrom, tp = 200 µs, D = 0 Surge current Verlustleistung Power dissipation Wärmewiderstand Thermal resistance Kennwerte (TA = 25 °C) Characteristics Bezeichnung Description Wellenlänge der Strahlun.

GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter SFH 495 P SFH 4552 29 27 5.0 4.2 Anode 2.54 mm spacing 5.9 5.5 0.6 0.4 0.8 0.4 Area not flat Chip position GEX06971 Area not flat 0.6 0.4 6.9 6.1 5.7 5.5 2.54 mm spacing 0.8 0.4 5.9 5.5 1.8 1.2 29.5 27.5 Cathode (Diode) Collector (Transistor) ø5.1 ø4.8 4.0 3.4 Chip position 0.6 0.4 GEX06630 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale q Stimulierter Emitter mit sehr ho.

SFH4552 Features

* q Stimulated emitter with high efficiency q Laser diode in diffuse package q Suitable esp. for pulse operation at high Wirkungsgrad Laserdiode in diffusem Gehäuse Besonders geeignet für Impulsbetrieb bei hohen Strömen Hohe Zuverlässigkeit Gegurtet lieferbar current q High reliability q Available o

SFH4552_SiemensSemiconductorGroup.pdf

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Datasheet Details

Part number:

SFH4552

Manufacturer:

Siemens Semiconductor Group

File Size:

43.77 KB

Description:

Gaas-ir-lumineszenzdiode gaas infrared emitter.

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SFH4552 GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter Siemens Semiconductor Group