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SFH4595 - High-Speed GaAlAs Infrared Emitter

Description

Betriebs- und Lagertemperatur Operating and storage temperature range Sperrspannung Reverse voltage Durchlaβstrom Forward current Stoβstrom, tp = 10 µs, D = 0 Surge current Verlustleistung Power dissipation Wärmewiderstand Sperrschicht - Umgebung, freie Beinchenlänge max.

Features

  • q High pulse power and high radiant flux Φe q Very short switching times (10 ns) q Low forward voltage and power dissipation q Very high long-time stability q High reliability q Available on tape and reel q Suitable for surface mounting (SMT) q Same package as photodiode SFH 2500/ SFH 2505 and phototransistor SFH 3500/ SFH 3505 q Spectral match with silicon photodetectors.

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Full PDF Text Transcription

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Schnelle GaAlAs-IR-Lumineszenzdiode High-Speed GaAlAs Infrared Emitter SFH 4590 SFH 4595 2.7 2.3 2.05 R 1.95 2.7 2.4 Chip position 4.5 7.5 3.9 5.5 (3.2) (R 2.8) (3.2) 5.8 5.4 GEO06968 14.7 13.1 2.54 mm spacing 0...0.1 3.7 3.3 Cathode 4.5 3.9 7.7 7.1 Chip position 8.0 7.4 15.5 14.7 2.54 mm spacing 2.05 R 1.95 2.7 2.4 4.5 3.9 4.8 4.4 SFH 4590 (3.2) (R 2.8) (3.2) 5.8 5.4 GEO06969 Cathode 4.5 3.9 7.7 7.1 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Semiconductor Group 4.8 4.
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