HYB39S256160T Datasheet - Siemens Semiconductor

HYB39S256160T (HYB39S256xxx) 256 MBit Synchronous DRAM

HYB 39S256400T-8B on request HYB 39S256400T-10 on request HYB 39S256800T-8 on request HYB 39S256800T-8B on request HYB 39S256800T-10 on request HYB 39S256800T-8 www.DataSheet4U.com on request HYB 39S256800T-8B on request HYB 39S256800T-10 on request Pin Description and Pinouts CLK CKE CS RAS C.

256 MBit Synchronous DRAM HYB 39S256400/800/160T Preliminary Information High Performance: -8 -8B 100 10 6 12 7 -10 100 10 7 15 8 Units MHz ns ns ns ns Multiple Burst Read with Single Write Operation Automatic and Controlled Precharge Command Data Mask for Read/Write control (× 4, × 8) Data Mask for byte control (× 16) Auto Refresh (CBR) and Self Refresh Suspend Mode and Power Down Mode 8192 refresh cycles/64 ms 7,.

HYB39S256160T Features

* signals CS, RAS, CAS, WE, and DQM at the positive edge of the clock. The following list shows the truth table fo

HYB39S256160T Datasheet (489.71 KB)

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Datasheet Details

Part number:

HYB39S256160T

Manufacturer:

Siemens Semiconductor

File Size:

489.71 KB

Description:

(hyb39s256xxx) 256 mbit synchronous dram.

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HYB39S256160T HYB39S256xxx 256 MBit Synchronous DRAM Siemens Semiconductor

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