HYB39S256400 Datasheet - Siemens Semiconductor

HYB39S256400 - (HYB39S256xxx) 256 MBit Synchronous DRAM

HYB 39S256400T-8B on request HYB 39S256400T-10 on request HYB 39S256800T-8 on request HYB 39S256800T-8B on request HYB 39S256800T-10 on request HYB 39S256800T-8 www.DataSheet4U.com on request HYB 39S256800T-8B on request HYB 39S256800T-10 on request Pin Description and Pinouts CLK CKE CS RAS C

256 MBit Synchronous DRAM HYB 39S256400/800/160T Preliminary Information High Performance: -8 -8B 100 10 6 12 7 -10 100 10 7 15 8 Units MHz ns ns ns ns Multiple Burst Read with Single Write Operation Automatic and Controlled Precharge Command Data Mask for Read/Write control (× 4, × 8) Data Mask for byte control (× 16) Auto Refresh (CBR) and Self Refresh Suspend Mode and Power Down Mode 8192 refresh cycles/64 ms 7,

HYB39S256400 Features

* signals CS, RAS, CAS, WE, and DQM at the positive edge of the clock. The following list shows the truth table fo

HYB39S256400_SiemensSemiconductor.pdf