HYM322035GS-60 Datasheet (Siemens) - 2M x 32-Bit Dynamic RAM Module

HYM322035GS-60, 2M x 32-Bit Dynamic RAM Module

EDO-DRAM Module (access time 50 ns) EDO-DRAM Module (access time 60 ns) EDO-DRAM Module (access time 70 ns) EDO-DRAM Module (access time 50 ns) EDO-DRAM Module (access time 60 ns) EDO-DRAM Module (access time 70 ns) Semiconductor Group 2 HYM 322035S/GS-50/-60/-70 2M × 32-Bit EDO-Module Pin Confi

2M x 32-Bit Dynamic RAM Module HYM 322035S/GS-50/-60/-70 Advanced Information 2 097 152 words by 32-bit organization 1 memory bank Fast access and cycle time 50 ns access time 84 ns cycle time (-50 version) 60 ns access time 104 ns cycle time (-60 version) 70 ns access time 124 ns cycle time (-70 version) Hyper page mode - EDO capability 35 ns cycle time (-50 version) 40 ns cycle time (-60 version) 45 ns cycle time (-70 version) Single + 5 V (± 10 %) supply Low p

HYM322035GS-60 Features

* ddress can be changed once or less while RAS = Vil. In case of ICC4 it can be changed once or less during a hyper page mode (EDO) cycle. 5) An initial pause of 200 µs is required after power-up followed by 8 RAS cycles of which at least one cycle has to be a refresh cycle, before proper device o