HYM364025S - 4M x 36-Bit EDO - DRAM Module
EDO-DRAM Module (access time 50 ns) EDO-DRAM Module (access time 60 ns) EDO-DRAM Module (access time 50 ns) EDO-DRAM Module (access time 60 ns) Semiconductor Group 2 HYM 364025S/GS-50/-60 4M × 36-Bit EDO-Module Pin Configuration Pin Names VSS DQ18 DQ19 DQ20 DQ21 N.C.
A1 A3 A5 A10 DQ22 DQ23 DQ24
4M x 36-Bit EDO - DRAM Module HYM364025S/GS-50/-60 SIMM modules with 4 194 304 words by 36-Bit organization for PC main memory applications Fast access and cycle time 50 ns access time 84 ns cycle time (-50 version) 60 ns access time 104 ns cycle time (-60 version) Hyper Page Mode (EDO) capability 20 ns cycle time (-50 version) 25 ns cycle time (-60 version) Single + 5 V (± 10 %) supply Low power dissipation max.
6820 mW active (-50 version) max.
6160 mW active (-60 version) CMOS
HYM364025S Features
* d of 8 RAS cycles are required. 6) AC measurements assume
