HYM641010GS-60 Datasheet - Siemens

HYM641010GS-60 1M x 64-Bit Dynamic RAM Module

60 ns DRAM module 70 ns DRAM module 60 ns DRAM module 70 ns DRAM module Note: 1 = high level ( driver output), 0 = low level ( driver output) for PDE active ( ground) . For PDE at a high level all PD terminals are in tri-state. Semiconductor Group 2 HYM 641010/20GS-60/-70 1M x 64 Module Pin Co.

1M × 64-Bit Dynamic RAM Module HYM 641010GS-60/-70 HYM 641020GS-60/-70 Advanced Information 1 048 576 words by 64-bit organization Fast access and cycle time 60 ns access time 110 ns cycle time (-60 version) 70 ns access time 130 ns cycle time (-70 version) Fast page mode capability with 40 ns cycle time (-60 version) 45 ns cycle time (-70 version) Single + 5 V (± 10 %) supply Low power dissipation max. 9680 mW active (-60 version) max. 8800 mW active (-70 version) CMOS

HYM641010GS-60 Features

* ad time Write

HYM641010GS-60_SiemensSemiconductorGroup.pdf

HYM641010GS-60 Datasheet Preview — Preview of HYM641010GS-60 PDF

Datasheet Details

Part number:

HYM641010GS-60

Manufacturer:

Siemens

File Size:

82.89 KB

Description:

1m x 64-bit dynamic ram module.

📁 Related Datasheet

HYM641010GS-70 1M x 64-Bit Dynamic RAM Module (Siemens)

HYM641020GS-60 1M x 64-Bit Dynamic RAM Module (Siemens)

HYM641020GS-70 1M x 64-Bit Dynamic RAM Module (Siemens)

HYM64V1005GU-5 3.3V 1M x 64-Bit EDO-DRAM Module 3.3V 1M x 72-Bit EDO-DRAM Module (Siemens)

HYM64V1005GU-50 3.3V 1M x 64-Bit EDO-DRAM Module 3.3V 1M x 72-Bit EDO-DRAM Module (Siemens)

HYM64V1005GU-60 3.3V 1M x 64-Bit EDO-DRAM Module 3.3V 1M x 72-Bit EDO-DRAM Module (Siemens)

HYM64V1605GU-50 3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module (Siemens)

HYM64V1605GU-60 3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module (Siemens)

TAGS

HYM641010GS-60 HYM641010GS-60 64-Bit Dynamic RAM Module Siemens

HYM641010GS-60 Distributor