HYM641010GS-60 Datasheet (Siemens) - 1M x 64-Bit Dynamic RAM Module

HYM641010GS-60, 1M x 64-Bit Dynamic RAM Module

60 ns DRAM module 70 ns DRAM module 60 ns DRAM module 70 ns DRAM module Note: 1 = high level ( driver output), 0 = low level ( driver output) for PDE active ( ground) .

For PDE at a high level all PD terminals are in tri-state.

Semiconductor Group 2 HYM 641010/20GS-60/-70 1M x 64 Module Pin Co

1M × 64-Bit Dynamic RAM Module HYM 641010GS-60/-70 HYM 641020GS-60/-70 Advanced Information 1 048 576 words by 64-bit organization Fast access and cycle time 60 ns access time 110 ns cycle time (-60 version) 70 ns access time 130 ns cycle time (-70 version) Fast page mode capability with 40 ns cycle time (-60 version) 45 ns cycle time (-70 version) Single + 5 V (± 10 %) supply Low power dissipation max.

9680 mW active (-60 version) max.

8800 mW active (-70 version) CMOS

HYM641010GS-60 Features

* ad time Write