Preliminary data SGP02N60 IGBT Low forward voltage drop High switching speed Low tail current Latch-up free Avalanche rated Type SGP02N60 VCE 600V IC 2A Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage RGE = 20 kΩ Gate-emitter voltage DC collector current TC = 25 °C TC = 100 °C Pulsed collector current, tp = 1 ms TC = 25 °C TC = 100 °C Avalanche energy, single pulse IC = 2 A, VCC = 50 V, RGE = 25 Ω L = 1.5 mH, Tj
Datasheet Details
Part number:
SGP02N60
Manufacturer:
Siemens
File Size:
81.57 KB
Description:
Igbt.