SPB80N03L - Power Transistor

Datasheet Summary

Features

N channel.
Enhancement mode Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current VDS ID 30 80 V A RDS(on) 0.006 Ω.
Avalanche rated.
Logic Level.
dv/dt rated.
175°C operating temperature Type SPP80N03L SPB80N03L Package Ordering Code Packaging Pin 1 G Pin 2 Pin 3 D S P-TO220-3-1 Q67040-S4735-A2 Tube P-TO263-3-2 Q67040-S4735-A3 Tape and Reel Maximum Ratings, at Tj = 25 °C, unless otherwis.

Siemens

📥 Download Datasheet

Datasheet Details

Part number	SPB80N03L
Manufacturer	Siemens
File Size	107.21 KB
Description	Power Transistor
Datasheet	SPB80N03L Datasheet
Additional preview pages of the SPB80N03L datasheet.

📁 Similar Datasheet

SPB80N03 - SIPMOS Power Transistor (Siemens Semiconductor Group)
SPB80N03S2-03 - OptiMOS Power-Transistor (Infineon Technologies)
SPB80N03S2-03 - OptiMOS Power-Transistor (Infineon Technologies)
SPB80N03S2L-03 - OptiMOS Power-Transistor (Infineon Technologies)
SPB80N03S2L-03 - OptiMOS Power-Transistor (Infineon Technologies)
SPB80N03S2L-04 - OptiMOS Power-Transistor (Infineon Technologies)
SPB80N03S2L-04 - Power-Transistor (Infineon Technologies)
SPB80N03S2L-05 - OptiMOS Power-Transistor (Infineon Technologies)
SPB80N03S2L-05 - Power-Transistor (Infineon Technologies)
SPB80N03S2L-06 - OptiMOS Power-Transistor (Infineon Technologies)

Other Datasheets by Siemens

Full PDF Text Transcription

Click to expand full text

SPP80N03L SIPMOS® Power Transistor Features • N channel • Enhancement mode Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current VDS ID 30 80 V A RDS(on) 0.

Published: Feb 13, 2014 |