P14N65FJD Datasheet - Silan Microelectronics

650V SUPER JUNCTION MOS POWER TRANSISTOR

P14N65FJD Features

* 14A,650V, RDS(on)(typ.)=0.26@VGS=10V

* New revolutionary high voltage technology

* Ultra low gate charge

* Periodic avalanche rated

* Extreme dv/dt rated

* High peak current capability 123 12 3 TO-220FJD-3L TO-220-3L ORDERING INFORMATION Part No. SVSP14N65FJDD2 SVSP1

P14N65FJD General Description

SVSP14N65FJD/T/KD2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s DPMOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavio.

P14N65FJD Datasheet (303.37 KB)

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Part number:

P14N65FJD

Manufacturer:

Silan Microelectronics

File Size:

303.37 KB

Description:

650v super junction mos power transistor.

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P14N65FJD 650V SUPER JUNCTION MOS POWER TRANSISTOR Silan Microelectronics

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P14N65FJD Features

P14N65FJD General Description

Datasheet Details

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