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SJT688APPN - PNP SILICON TRANSISTOR

Datasheet Summary

Description

SJT688APPN is PNP silicon transistor fabricated with Silan planar transistor technology, The advanced technology of multilayer epitaxy, ultra-low density of crystal defects, polyimide passivation, and thin chip of less than 200 microns makes low thermal resistance, large power dissipation and good

Features

  • High breakdown voltage margin.
  • Very low leakage current.
  • High output power: 80W.
  • High secondary breakdown tolerance and reliability.

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Datasheet Details

Part number SJT688APPN
Manufacturer Silan Microelectronics
File Size 321.90 KB
Description PNP SILICON TRANSISTOR
Datasheet download datasheet SJT688APPN Datasheet
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SJT688APPN_Datasheet SJT688A PNP SILICON TRANSISTOR DESCRIPTIONS SJT688APPN is PNP silicon transistor fabricated with Silan planar transistor technology, The advanced technology of multilayer epitaxy, ultra-low density of crystal defects, polyimide passivation, and thin chip of less than 200 microns makes low thermal resistance, large power dissipation and good reliability of SJT688APPN. Optimized die structure design and package design promote secondary breakdown resistance of the device. This product is mainly used for output power level of audio power amplifier in car stereo audio, has the characteristics of wide linear range and low distortion. The package available is TO-3P. Complementary NPN transistor: SJT718ANPN.
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