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SVF4N80MJ Datasheet 800V N-CHANNEL MOSFET

Manufacturer: Silan Microelectronics

Download the SVF4N80MJ datasheet PDF. This datasheet also includes the SVF4N80F variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (SVF4N80F-SilanMicroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SVF4N80MJ
Manufacturer Silan Microelectronics
File Size 687.94 KB
Description 800V N-CHANNEL MOSFET
Download SVF4N80MJ Download (PDF)

General Description

SVF4N80F/D/MJ/K is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology.

The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices are widely used in AC-DC power supplies, DC-DC converters and H-bridge PWM motor drivers.

Overview

SVF4N80F/D/MJ/K_Datasheet 4A, 800V N-CHANNEL MOSFET GENERAL.

Key Features

  • 4A,800V, RDS(on)(typ. )=3.3@VGS=10V.
  • Low gate charge.
  • Low Crss.
  • Fast switching.
  • Improved dv/dt capability.

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