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SVF4N80MJ, SVF4N80F Datasheet - Silan Microelectronics

SVF4N80MJ 800V N-CHANNEL MOSFET

SVF4N80F/D/MJ/K is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switchin.

SVF4N80MJ Features

* 4A,800V, RDS(on)(typ.)=3.3@VGS=10V

* Low gate charge

* Low Crss

* Fast switching

* Improved dv/dt capability NOMENCLATURE ORDERING INFORMATION Part No. SVF4N80F SVF4N80D SVF4N80DTR SVF4N80MJ SVF4N80K Package TO-220F-3L TO-252-2L TO-252-2L TO-251J-3L TO-262-3L Marking SVF4N

SVF4N80F-SilanMicroelectronics.pdf

This datasheet PDF includes multiple part numbers: SVF4N80MJ, SVF4N80F. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number:

SVF4N80MJ, SVF4N80F

Manufacturer:

Silan Microelectronics

File Size:

687.94 KB

Description:

800v n-channel mosfet.

Note:

This datasheet PDF includes multiple part numbers: SVF4N80MJ, SVF4N80F.
Please refer to the document for exact specifications by model.

SVF4N80MJ Distributor

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SVF4N80MJ SVF4N80F 800V N-CHANNEL MOSFET Silan Microelectronics