SVF5N60T
DESCRIPTION
SVF5N60T/F/D/MJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-Cell TM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are widely used in AC-DC power suppliers, DCDC converters and H-bridge PWM motor drivers.
FEATURES
∗ 5A,600V,RDS(on)（typ）=1.88Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability
NOMENCLATURE
ORDERING INFORMATION
Part No. SVF5N60T SVF5N60F SVF5N60D SVF5N60DTR SVF5N60MJ Package TO-220-3L TO-220F-3L TO-252-2L TO-252-2L TO-251J-3L Marking SVF5N60T SVF5N60F SVF5N60D SVF5N60D SVF5N60MJ Material Pb free Pb free Pb free Pb free Pb free Packing Tube Tube Tube Tape & Reel Tube
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://.silan..cn
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