SGTP40V65SDB1P7 Datasheet | Silan Semiconductors

DESCRIPTION The SGTP40V65SDB1P7 field stop IGBT adopts Silan Field Stop V technology, features low conduction loss and switching loss. This device is applicable to photovoltaic, UPS, SMPS, and PFC fields. FEATURES - 40A, 650V, VCE(sat)(typ.)=1.35V@IC=40A - Low conduction loss - Ultra-fast switching - High input impedance - TJmax=175C C 2 1 G 3 E 123 TO-247-3L NOMENCLATURE IGBT series Technical grade Current, 40: 40A N : N Channel NE : N-channel planar gate with ESD T : Field Stop 3/4 U : Field Stop 4+ V : Field Stop 5 W: Field Stop 6 X : Field Stop 7 Voltage, 65: 650V, 120: 1200V SGT P 40 V 65 S D B 1 P7 Package P7: TO-247-3L 1,2,3… : Version No. Blank: Standard diode M : Standard Diode, full range R : Rapid Diode B : Rapid Diode, full range S : Soft Diode, full range D : Packaged with fast recovery diode R : RC IGBT L : Ultra low switching, remended frequency ~2KHz Q : Low switching, remended frequency 2~20KHz S : Standard frequency, remended frequency 5~40KHz F : Fast...