SGTP40V65SDB1P7 Datasheet - Silan Semiconductors

SGTP40V65SDB1P7 - 650V FIELD STOP IGBT

SGTP40V65SDB1P7 Features

* low conduction loss and switching loss. This device is applicable to photovoltaic, UPS, SMPS, and PFC fields. FEATURES

* 40A, 650V, VCE(sat)(typ.)=1.35V@IC=40A

* Low conduction loss

* Ultra-fast switching

* High input impedance

* TJmax=175C C 2 1 G 3 E 123 TO-247-3L NOMENCLATU

Datasheet Details

SGTP40V65SDB1P7

Silan Semiconductors

422.88 KB

650v field stop igbt.

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