SSM2306N N-channel Enhancement-mode Power MOSFET

Silicon Standard

Description

SSM2306N N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Capable of 2.5V gate-drive Lower on-resistance Surface-mount package .
D SOT-23 G S BVDSS RDS(ON) ID Power MOSFETs from Silicon Standard utilize advanced processing techniques to achieve the lowest possible on-resist.

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Datasheet Specifications

Part number: SSM2306N
Manufacturer: Silicon Standard
File Size: 141.90 KB
Datasheet: SSM2306N-SiliconStandard.pdf
Description: N-channel Enhancement-mode Power MOSFET

Applications

* G 20V 32mΩ 5.3A D S Absolute Maximum Ratings Symbol Parameter VDS VGS ID @ TA=25°C ID @ TA=70°C IDM PD @ TA=25°C Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3, VGS @ 4.5V Continuous Drain Current3, VGS @ 4.5V Pulsed Drain Current1,2 Total Power Dissipation Linear Deratin

SSM2306N Distributors

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SSM2306N N-channel Enhancement-mode Power MOSFET Silicon Standard

Silicon Standard SSM2306N-like datasheet