SSM2306N - N-channel Enhancement-mode Power MOSFET

Silicon Standard

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Datasheet Details

Part number	SSM2306N
Manufacturer	Silicon Standard
File Size	141.90 KB
Description	N-channel Enhancement-mode Power MOSFET
Datasheet	SSM2306N-SiliconStandard.pdf

SSM2306N Product details

Description

D SOT-23 G S BVDSS RDS(ON) ID Power MOSFETs from Silicon Standard utilize advanced processing techniques to achieve the lowest possible on-resistance in an extremely efficient and cost-effective device.The SOT-23 package is widely used for commercial and industrial applications.G 20V 32mΩ 5.3A D S Absolute Maximum Ratings Symbol Parameter VDS VGS ID @ TA=25°C ID @ TA=70°C IDM PD @ TA=25°C Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3, VGS @ 4.5V Continuous Dra

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Published: Apr 13, 2017 |