29EE010 1 Mbit (128K x8) Page-Mode EEPROM

Silicon Storage Technology

29EE010 Description

1 Mbit (128K x8) Page-Mode EEPROM SST29EE010 / SST29LE010 / SST29VE010 SST29EE010 / SST29LE010 / SST29VE0101Mb Page-Mode flash memories Data Sheet F.
The SST29EE/LE/VE010 are 128K x8 CMOS Page-Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology.

29EE010 Features

* Single Voltage Read and Write Operations
* 5.0V-only for SST29EE010
* 3.0-3.6V for SST29LE010
* 2.7-3.6V for SST29VE010
* Superior Reliability
* Endurance: 100,000 Cycles (typical)
* Greater than 100 years Data Retention
* Low Power

29EE010 Applications

* the SST29EE/LE/VE010 are offered with a guaranteed PageWrite endurance of 10,000 cycles. Data retention is rated at greater than 100 years. The SST29EE/LE/VE010 are suited for applications that require convenient and economical updating of program, configuration, or data memory. For all system appl

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Datasheet Details

Part number: 29EE010
Manufacturer: Silicon Storage Technology
File Size: 326.37 KB
Datasheet: 29EE010_SiliconStorageTechnologyInc.pdf
Description: 1 Mbit (128K x8) Page-Mode EEPROM

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Mbit 128K Page-Mode EEPROM Silicon Storage Technology

Silicon Storage Technology 29EE010-like datasheet