29EE010

1 Mbit (128K x8) Page-Mode EEPROM

Silicon Storage Technology

29EE010 Features

* Single Voltage Read and Write Operations

* 5.0V-only for SST29EE010

* 3.0-3.6V for SST29LE010

* 2.7-3.6V for SST29VE010

* Superior Reliability

* Endurance: 100,000 Cycles (typical)

* Greater than 100 years Data Retention

* Low Power

29EE010 General Description

The SST29EE/LE/VE010 are 128K x8 CMOS Page-Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST29EE/LE/.

29EE010 Datasheet (326.37 KB)

29EE010 Datasheet Preview — Preview of 29EE010 PDF

Datasheet Details

Part number:

29EE010

Manufacturer:

Silicon Storage Technology

File Size:

326.37 KB

Description:

1 mbit (128k x8) page-mode eeprom.
1 Mbit (128K x8) Page-Mode EEPROM SST29EE010 / SST29LE010 / SST29VE010 SST29EE010 / SST29LE010 / SST29VE0101Mb Page-Mode flash memories Data Sheet F.

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29EE010 Mbit 128K Page-Mode EEPROM Silicon Storage Technology

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29EE010 Features

29EE010 General Description

Datasheet Details

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