Description
The SST34HF3223B/3243B ComboMemory devices integrate four CMOS flash memory banks with a 256K x8 / 128K x16 or 512K x8 / 256K x16 CMOS SRAM memory bank in a Multi-Chip Package (MCP).
Features
- Flash Organization: Two 1M x16.
- Quad-Bank Architecture for Concurrent Read-While-Write Operation.
- 12 Mbit + 4 Mbit + 12 Mbit + 4 Mbit.
- SRAM Organization:.
- 2 Mbit: 256K x8 or 128K x16.
- 4 Mbit: 512K x8 or 256K x16.
- Single 2.7-3.3V Read-While-Write Operations.
- Superior Reliability.
- Endurance: 100,000 Cycles (typical).
- Greater than 100 years Data Retention.
- Low Power Consumption:.
- Active Cur.
SST34HF3223B_SiliconStorageTechnology.pdf