2N5565 - dual n-channel JFET
matched dual n-channel JFETs designed for H Siliccnix Performance Curves NCB See Section 4 Wideband Differential Amplifiers Commutators BENEFITS High Gain 7500 ~mho Minimum 9fs Specified Matching Characteristics ABSOLUTE MAXIMUM RATINGS (25°C) Gate-Gate Voltage ±80V Gate Drain or Gate Source Voltage -40 V Gate Current 50mA Device Dissipation (Each Side), T A = 25°C (Derate 2.2 mW;oC) 325mW Total Device Dis
