E212, E210 Datasheet - Siliconix

E212 n-channel JFET

n-channel JFETs designed for . . . N -IU General Purpose Amplifiers o N IU Performance Curves NZF See Section 4 BENEFITS High Gain GFS = 7000 ,umho Minimum (E211, E212) High Input Impedance IGSS = 100 pA Maximum Ciss = 5 pF Typical ABSOLUTE MAXIMUM RATINGS (25°C) Gate-Drain or Gate-Source Voltage -25 V Gate Cu rrent 10 mA Total Device Dissipation (25°C Free-Air Temperature) . . . . . . . . . . . . . .. 350 mW Power Derating (to +125°C) 3.5 mWrC Storag.

E210-Siliconix.pdf

E212 Datasheet Preview — This datasheet PDF includes multiple part numbers: E212, E210. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

E212, E210

Manufacturer:

Siliconix

File Size:

56.82 KB

Description:

N-channel jfet.

Note:

This datasheet PDF includes multiple part numbers: E212, E210.
Please refer to the document for exact specifications by model.

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TAGS

E212 E210 n-channel JFET Siliconix

E212 Distributor